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The Sixteenth International Conference on Narrow Gap Semiconductors will be held at Hangzhou, China.

The aim of the conference series is to bring together experts and scientists to discuss the latest findings and developments in the fundamental physics of narrow gap semiconductors and quantum heterostructures, together with device physics, including mid and far-infrared lasers and detectors and spintronic devices. Since last NGS conference, there have been enormous findings in new-era narrow gap systems, such as topological insulators and graphene, which will be hot topics in this conference.  


     
Call For Paper Abstracts   Registration Guidelines
For electronic submission, your source file must be Adobe Acrobat (PDF) format, saved with NO document security, with all figures embedded electronically. Please carefully review instructions for your software to insert graphics into your paper. For the title, we recommend using bold Times or Times New Roman font in 14 point size and for the rest of the abstract Times or Times New Roman font in 11 point size and a line spacing of 16 points.

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  Payment of registration fees is required prior to program attendance. Registration will be processed when payment is received.

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Important Dates

Deadline of abstract submission
10th June 2013

Notification of acceptance
30th June 2013

Open for registration
15th March 2013


Abstract submission has been opened!, 19 Mar 2013

Abstract submission has been opened! Click here to enter.


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NGS 2013 website is operating now!, 25 Aug 2012

NGS 2013 website is operating now!


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